Welcome!

We are the High Speed Integrated Circuits Group, a research group with the University of Illinois at Urbana-Champaign. We design and build cutting edge devices and circuits for the next generation of high-frequency applications.

New Course on LEDs and Solar Cells

In addition to ECE 447 (Active Microwave Circuit Design), Professor Feng will be joint-teaching a course with Professor K.Y. Cheng.  This new course will focus on the physical operation and historical applications of LEDs and Solar Cells.

This will be a great opportunity to learn about these two important devices, from two men that worked with some of the most influential inventors in the field of optoelectronic devices.

Course webpage coming soon for ECE 498MF (Semiconductor LEDs and Solar Cells). For now, information can be found on the ECE department summary for the course

HSIC Group Breaks High Speed Light Modulation Record — Twice

“Scientists break high speed light modulation record — Twice” : Science Daily

“Han Wui Thenworks to create faster, cheaper network technology”: Illinois ECE Headline News

Publication download link: Applied Physics Letters

“4.3 GHz optical bandwidth light emitting transistor”
G. Walter, C. H. Wu, H. W. Then, M. Feng, and N. Holonyak, Jr., Appl. Phys. Lett. 94, 241101  (2009)

“Holy Grail” of a Terahertz Transistor Finally Within Reach

feng_milton_b

World’s fastest transistor operates at blinding speed: New Scientist

World’s fastest transistor approaches goal of terahertz device: ECE News Bureau

Applied Physics Letters Names Transistor Laser Top 5 Paper of Past 43 Years

tlaserIllinois research team fabricates transistor laser: compoundsemiconductor.net

UI building a better transistor: News-Gazette November 2004

New transistor laser could lead to faster signal processing: UIUC News Bureau November 2004

America Institute of Physics selected “Room Temperature CW Operation of Transistor Laser” as top 5 paper published in the 43 years history of Applied Physics Letter in 2006

Light Emitting Transistor

509 GHz HBT

  • Illinois researchers create world’s fastest transistor: UIUC News Bureau November 2003
  • Forbes Magazine Lists HSIC’s high speed InP transistor as a nanotech breakthrough of 2003!

382 GHz HBT

Low-Voltage High Speed MEMS Switch

Low-voltage MEMS switch developed for high-speed electronics: UIUC News Bureau April 2002