Areas of research
- Optoelectronics / Receiver
- Wireless Electronics / ADC
- Novel High Speed Device Technology
Optoelectronics / Receiver
“Bandgap shifting of an ultra-thin InGaAs/InP quantum well infrared photodetector via rapid thermal annealing”
Sengupta, D K. Kim, S. Kuo, H C. Curtis, A P. Hsieh, K C. Bishop, S G. Feng, M. Stillman, G E. Gunapala, S D. Bandara, S V. Chang, Y C. Liu, H C. Rapid Thermal and Integrated Processing VII Materials Research Society Symposium – Proceedings. v 525 1998. MRS, Warrendale, PA, USA. p 385-390
“Redshifting and broadening of quantum-well infrared photodetector’s response via impurity-free vacancy disordering”
Sengupta, Deepak. Jandhyala, Vikram. Kim, Sangsig. Fang, Weich. Malin, Jay. Apostolakis, Peter. Hsieh, Kwong-Chi. Chang, Yia-Chung. Chuang, Shun Lien. Bandara, Sumith. Gunapala, Sarath. Feng, Milton. Michielssen, Eric. Stillman, Greg. IEEE Journal of Selected Topics in Quantum Electronics. v 4 n 4 Jul-Aug 1998. p 746-757
“Efficient analysis of large two-dimensional arbitrarily shaped finite gratings for quantum well infrared photodetectors”
Jandhyala, Vikram. Sengupta, Deepak. Shanker, Balasubramaniam. Michielssen, Eric. Feng, Milton. Stillman, Greg. Annual Review of Progress in Applied Computational Electromagnetics. v 1 1998. Applied Computational Electromagnetics Soc, Monterey, CA, USA. p 204-209
“Efficient electromagnetic analysis of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors”
Jandhyala, Vikram. Sengupta, Deepak. Shanker, Balasubramaniam. Michielssen, Eric. Feng, Milton. Stillman, Greg. Journal of Applied Physics. v 83 n 6 Mar 15 1998. p 3360-3363
“Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells”
Sengupta, D K. Jackson, S L. Curtis, A P. Fang, W. Malin, J I. Horton, T U. Kuo, H C. Moy, A. Miller, J. Hsieh, K C. Cheng, K Y. Chen, H. Adesida, I. Chuang, S L. Feng, M. et al. Journal of Electronic Materials. v 26 n 12 Dec 1997. p 1382-1388
“Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 mu m”
Sengupta, D K. Jackson, S L. Curtis, A P. Fang, W. Malin, J I. Horton, T U. Hartman, Q. Kuo, H C. Thomas, S. Miller, J. Hsieh, K C. Adesida, I. Chuang, S L. Feng, M. Stillman, G E. et al. Journal of Electronic Materials. v 26 n 12 Dec 1997. p 1376-1381
“GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates”
Sengupta, D K. Fang, W. Malin, J I. Li, J. Horton, T. Curtis, A P. Hsieh, K C. Chuang, S L. Chen, H. Feng, M. Stillman, G E. Li, L. Liu, H C. Bandara, K M S V. Gunapala, S D. et al. Applied Physics Letters. v 71 n 1 Jul 7 1997. p 78-80
“64-Gbit/s GaAs integrated DANE receiver/laser driver”
Chang, Wei-Heng. Mu, Jinghui H. Heins, M. Feng, Milton. Kim, J. McCallum, David S. Stone, Richard V. Guilfoyle, Peter S. Proceedings of SPIE – The International Society for Optical Engineering. v 3005 1997. Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, USA. p 334-353
“High-speed two-dimensional OEIC transceiver arrays”
Chang, Wei-Heng. Feng, Milton. Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung Kuotien Chi Kung Chieng Hsueh K’An. v 4 n 3 Aug 1997. p 213-225
“Design and fabrication of low-power 1-Gb/s OEIC receivers”
Chang, Wei-Heng. Airola, Darwin D. Feng, Milton. Proceedings of SPIE – The International Society for Optical Engineering v CR62 1996. Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, USA.. p 244-266
Wireless Electronics / ADC
“Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Applications”
J. J. Huang, M. Hattendorf, M. Feng, Q. Hartmann, and D. Ahmari, 2001 GaAs MANTECH
“Low cost 38GHz and 77GHz CPW MMICs using ion-implanted GaAs MESFETs”
D. Caruth, R.L. Shimmon, M. Heins, H. Hsia, Z. Tang, S.C. Shen, D. Becher, and M. Feng, MTT Symposium Digest, June 2000
“A 14 Bit, 1GS/s Digital-To-Analog Converter with Improved Dynamic Performances”
D. Seo, A. Weil, and M. Feng, Accepted, IEEE ISCAS 2000 PS PDF
“A Very Wide-Band 14Bit, 1GS/s Track-and-Hold Amplifier”
D. Seo, A. Weil, and M. Feng Accepted, IEEE ISCAS 2000 PS PDF
“Low-Power Decimation Filters for Oversampling ADCs via the Decorrelating (DECOR) Transform”
D. Seo, N. Shanbhag, and M. Feng Accepted, IEEE ISCAS 2000 PS PDF
“A Low Cost 77 GHz MMICs Process Using Direct Ion-Implanted GaAs MESFETs”
H. Hsia, J.R. Middleton, Z. Tang, R. Shimon, D. Caruth, D. Becher, J. Fendrich, and M. Feng, 1998 GaAs MANTECH
“Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes”
Shimon, R. Caruth, D. Middleton, J. Hsia, H. Feng, M. Mondal, J. Moghe, S. IEEE MTT-S International Microwave Symposium Digest. v 3 1998. IEEE, Piscataway, NJ, USA,98CH36192. p 1439-1442 TH2E-5
“Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide”
Heins, M S. Barlage, D W. Fresina, M T. Ahmari, D A. Hartmann, Q J. Stillman, G E. Feng, M. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers 1997. IEEE, Piscataway, NJ, USA,97CH36095.. p 215-218
“Accurate passive component models in coplanar waveguide for 50 GHz MMICs”
Shimon, R. Scherrer, D. Caruth, D. Middleton, J. Hsia, H. Feng, M. IEEE MTT-S International Microwave Symposium Digest. v 2 1997. IEEE, Piscataway, NJ, USA,97CH36037. p 769-772
“Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide”
Heins, M S. Barlage, D W. Fresina, M T. Ahmari, D A. Hartmann, Q J. Stillman, G E. Feng, M. IEEE MTT-S International Microwave Symposium Digest. v 1 1997. IEEE, Piscataway, NJ, USA,97CH36037. p 255-258
“Ka-Band Monolithic Low-Noise Amplifier Using Direct Ion-Implanted GaAs MESFET’s”
M. Feng, D.R. Scherrer, P.J. Apostolakis, J.R. Middleton, M.J. McPartlin, B.D. Lauterwassler, and J.D Oliver, Jr. IEEE Microwave and Guided Wave Letters, May 1995
Novel High Speed Device Technology
“Direct ion-implanted enhancement/depletion-mode GaAs MESFETs with Ft greater than 120 GHz and Fmax greater than 166 GHz for millimeter wave circuit applications”
D. Becher, S.C. Shen, D. Caruth, Z. Tang, and M. Feng, submitted to IEEE Trans. On Electron Devices
“Development of broadband low-actuation-voltage RF MEM switches”
S.C. Shen, Z. Fan, D. Becher, D. Caruth, and M. Feng, submitted to Special issue of APEC in Discrete Micro-Components for H.F. Applications
“Selective Area Growth and Characterization of AlGaN/GaN Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition”
B. S. Shelton, D. J. H. Lambert, J. J. Huang, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, Z. Liliental-Weber, M. Benarama, M. Feng, and R. D. Dupuis, IEEE, Trans. Electron. Devices, to be published
“Current Progress in GaN HBTs with a Current Gain 27″
J. J. Huang, David Caruth and Milton Feng D. J. H. Lambert, B. S. Shelton, M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, and R. D. Dupuis, 2001 Government Microcircuit Applications Conference
“Process Optimization for RF Performance of Ion-Implanted E/D MESFETs”
D. Becher, S. C. Shen, D. Caruth, and M. Feng, 2001 GaAs MANTECH
“Incorporation of an Alloy-Through Passivating-Ledge process into a Fullly Self-Aligned InGaAs/GaAs HBT process”
M. Hattendorf, A. Hartmann, and M. Feng, 2001 GaAs MANTECH
“Development of broadband low-voltage RF MEM Switches”
S. C. Shen, D. T. Becher, D. C. Caruth, and M. Feng, 2001 GaAs MANTECH
“Common Emitter Current Gain and Collector-Emitter Offset Voltage Study in AlGaN/GaN Heterojunction Bipolar Transistors”
J. J. Huang, Michael Hattendorf, and Milton Feng, D. J. H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, and R. D. Dupuis, IEEE, Electron Device Lett., to be published in March, 2001
“Comparison of AlGaN/GaN HFETs on Sapphire and SiC substrates”
B. Shelton, S.C. Shen, D. Lambert, T.Zhu, M. Wong, U. Chowdhury, H. Kwon, K. Kim, J. Denyszyn, M. Feng, and R. Dupuis, to be presented in Tenth Biennial Organometallic Vapor Phase Epitaxy Workshop, March 11-15, 2001
“Sub-10volts RF MEM switches”
S.C. Shen, D. Becher, D. Caruth, and M. Feng, to be presented in 2001 Government Microcircuit Application Conference, Mar. 3, 2001
“Broadband low actuation voltage RF MEM switches”
S.C. Shen, D. Caruth, and M.Feng, IEEE 2000 GaAs IC Symposium Digest, Nov. 5-8, 2000
“Properties of AlGaN/GaN Heterostructure Electronic Devices Grown by Metalorganic Chemical Vapor Deposition”
R. Dupuis, D. J. H. Lambert, U. Chowdhury, M. M. Wong, T. G. Zhu, B. S. Shelton, and Ho Ki Kwon, J. J. Huang, S. C. Shen and M. Feng, Next Generation mm-Wave Solid State Power Workshop, Oct. 22nd, 2000
“Graded-Emitter AlGaN/GaN Heterojunction Bipolar Transistors”
J. J. Huang, M. Hattendorf, and Milton Feng D. J. H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, and R. D. Dupuis, IEEE, Electron. Lett. 36, pp1239-1240, 2000
“The Growth of AlGaN/GaN Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition”
B. S. Shelton, D. J. H. Lambert, J. J. Huang, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, M. Feng, Z. Liliental-Weber, M. Benarama, and R. D. Dupuis, 2000, Nov. Journal of Crystal Growth for ICMOVPE X
“Magnesium Memory Effects inAlGaN/GaN HBTs Grown by Metalorganic Chemical Vapor Deposition”
D.J.H. Lambert, B.S. Shelton, M.M. Wong, U. Chowdhurry, H.K.Kwon, T.G. Zhu, J.J. Huang, M. Feng. R. D. Dupuis, 2000 Electronic materials conference
“AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition”
B.S. Shelton, J.J. Huang, D.J.H. Lambert, T.G. Zhu, M. M. Wong, C. J. Eiting, H.K.Kwon, M. Feng and R. D. Dupuis, Electronics Letters 36, 1, 2000 pp 80-81
“Process Development on 0.12-um Gate E/D GaAs Mesfets with fT and fmax > 100GHz Using Direct Ion Implantation for Low Power IC”
Z. Tang, H. Hsia, D. Becher, D. Caruth, and M. Feng, 2000 GaAs MANTECH
“Low actuation voltage RF MEMS switches with signal frequency from 0.25GHz to 40GHz”
S. C. Shen and M. Feng, IEEE International Electron Device Meetings 1999, Dec. 5-8, 1999
“DC and microwave performance evaluation of 100GHz ion-implanted MESFET and MOCVD epitaxial doped-channel HFET”
Z. Tang, H. Hsia, R. Shimon, D. Caruth, D.Becher, S. Shen, and M. Feng, 26th Intl. Symp. on Compound Semiconductors, Berlin, Germany, Aug. 22-26,1999
“Activation of silicon ion-implanted gallium nitride by furnace annealing”
Dupuis, R D. Eiting, C J. Grudowski, P A. Hsia, H. Tang, Z. Becher, D. Kuo, H. Stillman, G E. Feng, M. Journal of Electronic Materials. v 28 n 3 1999. p 319-324
“Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior”
Ahmari, David A. Raghavan, Gopal. Hartmann, Quesnell J. Hattendorf, Michael L. Feng, M. EEE Transactions on Electron Devices. v 46 n 4 1999. p 634-640
“Low Actuation Voltage RF MEMS Switches With Signal Frequencies From 0.25 GHz to 40 GHz”
S.C. Shen and M. Feng, International Electron Devices Meeting 1999 PDF
“Manufacturable InGaP/InGaAs/InP Doped-channel HFETs with ft and fmax over 170 GHz”
Z. Tang, H. Hsia, H.C. Kuo, D. Caruth, G.E. Stillman and M. Feng, 1999 GaAs MANTECH
“Direct Ion-Implanted GaAs MESFET with ft of 121 GHz and fmax of 160 GHz”
H. Hsia, Z. Tang, D. Caruth, D. Becher, and M. Feng, IEEE Electron Device Letters, May 1999
“InGaP/GaAs HFETs: Manufacturable High-Speed Devices”
Q.J. Hartman, A. Mahajan, D. Becher, H. Hsia, D.A. Ahmari, Q. Yang, I. Adesida, M. Feng, and G. E. Stillman, 1998 GaAs MANTECH
“InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer”
Ahmari, D A. Fresina, M T. Hartmann, Q J. Barlage, D W. Feng, M. Stillman, G E. IEEE Electron Device Letters. v 18 n 11 Nov 1997. p 559-561
“High temperature superconducting resonators and switches: design, fabrication, and characterization”
Feng, Milton. Gao, Frank. Zhou, Zhongmin. Kruse, Jay. Heins, Matt. Wang, Jianshi. Remillard, S. Lithgow, R. Scharen, M. Cardona, A. Forse, R IEEE Transactions on Microwave Theory & Techniques. v 44 n 7 pt 2 Jul 1996. p 1347-1355
“Noise Performance of Low Power 0.25 Micron Gate Ion Implanted D-Mode GaAs MESFET for Wireless Applications”
P.J. Apostolakis, J.R. Middleton, D. Scherrer and M. Feng, IEEE Electron Device Letters, July 1994
“Microwave Performance of Low-Power Ion-Implanted 0.25-Micron Gate GaAs MESFET for Low-Cost MMIC’s Applications”
P.J. Apostolakis, J.R. Middleton, J. Kruse, D. Scherrer, D. Barlage and M. Feng, IEEE Microwave and Guided Wave Letters, August 1993